APT58M50JU2 PDF Mode Download - MOSFET N-CH 500V 58A SOT227

Espesifikasyon pou APT58M50JU2

Nimewo pati : APT58M50JU2

Fabricant : Microsemi Corporation

Deskripsyon : MOSFET N-CH 500V 58A SOT227

Seri : POWER MOS 8™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 500V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 58A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 65 mOhm @ 42A, 10V

Vgs (th) (Max) @ Id : 5V @ 2.5mA

Chaje Gate (Qg) (Max) @ Vgs : 340nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 10800pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 543W (Tc)

Operating Tanperati : -40°C ~ 150°C (TJ)

Mounting Kalite : Chassis Mount

Pake Aparèy Founisè : SOT-227

Pake / Ka : SOT-227-4, miniBLOC

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

APT58M50JU2

Entèn Nimewo Pati

ABC-APT58M50JU2

Fabricant

Microsemi Corporation

Kout Deskripsyon

MOSFET N-CH 500V 58A SOT227

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

53105 moso

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pwodwi ki gen rapò pou APT58M50JU2 Microsemi Corporation

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APT58M50JU2 Mode

Espesifikasyon pou APT58M50JU2

pwodwi ki gen rapò pou APT58M50JU2 Microsemi Corporation