APTC60DDAM70T1G PDF Mode Download - MOSFET 2N-CH 600V 39A SP1

Espesifikasyon pou APTC60DDAM70T1G

Nimewo pati : APTC60DDAM70T1G

Fabricant : Microsemi Corporation

Deskripsyon : MOSFET 2N-CH 600V 39A SP1

Seri : CoolMOS™

Estati Pati : Active

FET Kalite : 2 N Channel (Dual Buck Chopper)

Karakteristik FET : Logic Level Gate

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 39A

RD sou (Max) @ Id, Vgs : 70 mOhm @ 39A, 10V

Vgs (th) (Max) @ Id : 3.9V @ 2.7mA

Chaje Gate (Qg) (Max) @ Vgs : 259nC @ 10V

Antre kapasite (Ciss) (Max) @ Vds : 7000pF @ 25V

Pouvwa - Max : 250W

Operating Tanperati : -40°C ~ 150°C (TJ)

Mounting Kalite : Chassis Mount

Pake / Ka : SP1

Pake Aparèy Founisè : SP1

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

APTC60DDAM70T1G

Entèn Nimewo Pati

ABC-APTC60DDAM70T1G

Fabricant

Microsemi Corporation

Kout Deskripsyon

MOSFET 2N-CH 600V 39A SP1

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

86496 moso

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pri nou

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pwodwi ki gen rapò pou APTC60DDAM70T1G Microsemi Corporation

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APTC60DDAM70T1G Mode

Espesifikasyon pou APTC60DDAM70T1G

pwodwi ki gen rapò pou APTC60DDAM70T1G Microsemi Corporation