APTC90AM60T1G PDF Mode Download - MOSFET 2N-CH 900V 59A SP1

Espesifikasyon pou APTC90AM60T1G

Nimewo pati : APTC90AM60T1G

Fabricant : Microsemi Corporation

Deskripsyon : MOSFET 2N-CH 900V 59A SP1

Seri : CoolMOS™

Estati Pati : Obsolete

FET Kalite : 2 N-Channel (Half Bridge)

Karakteristik FET : Super Junction

Drenaj nan Voltage Sous (Vdss) : 900V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 59A

RD sou (Max) @ Id, Vgs : 60 mOhm @ 52A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 6mA

Chaje Gate (Qg) (Max) @ Vgs : 540nC @ 10V

Antre kapasite (Ciss) (Max) @ Vds : 13600pF @ 100V

Pouvwa - Max : 462W

Operating Tanperati : -40°C ~ 150°C (TJ)

Mounting Kalite : Chassis Mount

Pake / Ka : SP1

Pake Aparèy Founisè : SP1

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

APTC90AM60T1G

Entèn Nimewo Pati

ABC-APTC90AM60T1G

Fabricant

Microsemi Corporation

Kout Deskripsyon

MOSFET 2N-CH 900V 59A SP1

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

52585 moso

referans pri

~~USD 0~~

pri nou

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ABC Semiconductor gen APTC90AM60T1G nan stock pou vann.

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pwodwi ki gen rapò pou APTC90AM60T1G Microsemi Corporation

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XCR3384XL-10FTG256C	Xilinx Inc.	IC CPLD 384MC 9NS 256BGA
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M4A5-256/128-10YNI	Lattice Semiconductor Corporation	IC CPLD 256MC 10NS 208QFP

APTC90AM60T1G Mode

Espesifikasyon pou APTC90AM60T1G

pwodwi ki gen rapò pou APTC90AM60T1G Microsemi Corporation