APTM100DSK35T3G PDF Mode Download - MOSFET 2N-CH 1000V 22A SP3

Espesifikasyon pou APTM100DSK35T3G

Nimewo pati : APTM100DSK35T3G

Fabricant : Microsemi Corporation

Deskripsyon : MOSFET 2N-CH 1000V 22A SP3

Seri : -

Estati Pati : Active

FET Kalite : 2 N-Channel (Dual)

Karakteristik FET : Standard

Drenaj nan Voltage Sous (Vdss) : 1000V (1kV)

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 22A

RD sou (Max) @ Id, Vgs : 420 mOhm @ 11A, 10V

Vgs (th) (Max) @ Id : 5V @ 2.5mA

Chaje Gate (Qg) (Max) @ Vgs : 186nC @ 10V

Antre kapasite (Ciss) (Max) @ Vds : 5200pF @ 25V

Pouvwa - Max : 390W

Operating Tanperati : -40°C ~ 150°C (TJ)

Mounting Kalite : Chassis Mount

Pake / Ka : SP3

Pake Aparèy Founisè : SP3

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

APTM100DSK35T3G

Entèn Nimewo Pati

ABC-APTM100DSK35T3G

Fabricant

Microsemi Corporation

Kout Deskripsyon

MOSFET 2N-CH 1000V 22A SP3

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

51136 moso

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pwodwi ki gen rapò pou APTM100DSK35T3G Microsemi Corporation

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APTM100DSK35T3G Mode

Espesifikasyon pou APTM100DSK35T3G

pwodwi ki gen rapò pou APTM100DSK35T3G Microsemi Corporation