Espesifikasyon pou APTM100H45STG

Nimewo pati : APTM100H45STG
Fabricant : Microsemi Corporation
Deskripsyon : MOSFET 4N-CH 1000V 18A SP4
Seri : -
Estati Pati : Active
FET Kalite : 4 N-Channel (H-Bridge)
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 1000V (1kV)
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 18A
RD sou (Max) @ Id, Vgs : 540 mOhm @ 9A, 10V
Vgs (th) (Max) @ Id : 5V @ 2.5mA
Chaje Gate (Qg) (Max) @ Vgs : 154nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 4350pF @ 25V
Pouvwa - Max : 357W
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : SP4
Pake Aparèy Founisè : SP4
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
MOSFET 4N-CH 1000V 18A SP4
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
33915 moso
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen APTM100H45STG nan stock pou vann.
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FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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pwodwi ki gen rapò pou APTM100H45STG Microsemi Corporation

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