APTM120H140FT1G Mode
Espesifikasyon pou APTM120H140FT1G
Nimewo pati :
APTM120H140FT1G
Fabricant :
Microsemi Corporation
Deskripsyon :
MOSFET 4N-CH 1200V 8A SP1
Seri :
-
Estati Pati :
Active
FET Kalite :
4 N-Channel (H-Bridge)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
1200V (1.2kV)
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
8A
RD sou (Max) @ Id, Vgs :
1.68 Ohm @ 7A, 10V
Vgs (th) (Max) @ Id :
5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
145nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
3812pF @ 25V
Pouvwa - Max :
208W
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake / Ka :
SP1
Pake Aparèy Founisè :
SP1
Pwa :
-
kondisyon :
Nouvo ak orijinal
Kalite Garanti :
365 jou garanti
stock Resous :
Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
ABC-APTM120H140FT1G
Fabricant
Kout Deskripsyon
MOSFET 4N-CH 1200V 8A SP1
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
71904 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- ABC Semiconductor gen APTM120H140FT1G nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
pwodwi ki gen rapò pou APTM120H140FT1G Microsemi Corporation
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|---|---|---|---|
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