Espesifikasyon pou APTM20DUM08TG

Nimewo pati : APTM20DUM08TG
Fabricant : Microsemi Corporation
Deskripsyon : MOSFET 2N-CH 200V 208A SP4
Seri : -
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 208A
RD sou (Max) @ Id, Vgs : 10 mOhm @ 104A, 10V
Vgs (th) (Max) @ Id : 5V @ 5mA
Chaje Gate (Qg) (Max) @ Vgs : 280nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 14400pF @ 25V
Pouvwa - Max : 781W
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : SP4
Pake Aparèy Founisè : SP4
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
MOSFET 2N-CH 200V 208A SP4
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
50031 moso
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen APTM20DUM08TG nan stock pou vann.
D 'opsyon ak anbake tan:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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pwodwi ki gen rapò pou APTM20DUM08TG Microsemi Corporation

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