BSC014NE2LSIATMA1 PDF Mode Download - MOSFET N-CH 25V 33A TDSON-8

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Nimewo pati : BSC014NE2LSIATMA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 25V 33A TDSON-8

Seri : OptiMOS™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 25V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 33A (Ta), 100A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 1.4 mOhm @ 30A, 10V

Vgs (th) (Max) @ Id : 2V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 39nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 2700pF @ 12V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 2.5W (Ta), 74W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : PG-TDSON-8

Pake / Ka : 8-PowerTDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

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Fabricant Nimewo Pati

BSC014NE2LSIATMA1

Entèn Nimewo Pati

ABC-BSC014NE2LSIATMA1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 25V 33A TDSON-8

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pwodwi ki gen rapò pou BSC014NE2LSIATMA1 Infineon Technologies

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EPM2210GF256C3N	Intel	IC CPLD 1700MC 7NS 256FBGA
XCR3512XL-7PQ208C	Xilinx Inc.	IC CPLD 512MC 7NSNS 208QFP
LC4384V-35TN176C	Lattice Semiconductor Corporation	IC CPLD 384MC 3.5NS 176TQFP
EPM7128AEFI100-7	Intel	IC CPLD 128MC 7.5NS 100FBGA
LC4512V-5TN176C	Lattice Semiconductor Corporation	IC CPLD 512MC 5NS 176TQFP
EPM1270F256C3N	Intel	IC CPLD 980MC 6.2NS 256FBGA
EPM7512AEFI256-10	Intel	IC CPLD 512MC 10NS 256FBGA
EPM7512AEQI208-10	Intel	IC CPLD 512MC 10NS 208QFP

BSC014NE2LSIATMA1 Mode

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pwodwi ki gen rapò pou BSC014NE2LSIATMA1 Infineon Technologies