BSD214SNH6327XTSA1 PDF Mode Download - MOSFET N-CH 20V 1.5A SOT363

Espesifikasyon pou BSD214SNH6327XTSA1

Nimewo pati : BSD214SNH6327XTSA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 20V 1.5A SOT363

Seri : OptiMOS™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.5A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V

RD sou (Max) @ Id, Vgs : 140 mOhm @ 1.5A, 4.5V

Vgs (th) (Max) @ Id : 1.2V @ 3.7µA

Chaje Gate (Qg) (Max) @ Vgs : 0.8nC @ 5V

Vgs (Max) : ±12V

Antre kapasite (Ciss) (Max) @ Vds : 143pF @ 10V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 500mW (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : PG-SOT363-6

Pake / Ka : 6-VSSOP, SC-88, SOT-363

Pwa : -

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BSD214SNH6327XTSA1

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ABC-BSD214SNH6327XTSA1

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Infineon Technologies

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MOSFET N-CH 20V 1.5A SOT363

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pwodwi ki gen rapò pou BSD214SNH6327XTSA1 Infineon Technologies

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ISPLSI 5512VE-100LF388I	Lattice Semiconductor Corporation	IC CPLD 512MC 10NS 388FBGA
XC2C512-7FT256I	Xilinx Inc.	IC CPLD 512MC 7.1NS 256BGA
EPM7512AETC144-7N	Intel	IC CPLD 512MC 7.5NS 144TQFP
XC2C512-7PQG208C	Xilinx Inc.	IC CPLD 512MC 7.1NS 208QFP
EPM7512AEQI208-10N	Intel	IC CPLD 512MC 10NS 208QFP
LC4384V-35FTN256C	Lattice Semiconductor Corporation	IC CPLD 384MC 3.5NS 256FTBGA
M4A5-192/96-6VNC	Lattice Semiconductor Corporation	IC CPLD 192MC 6NS 144TQFP
EPM2210F324C3N	Intel	IC CPLD 1700MC 7NS 324FBGA
XCR3512XL-12FG324C	Xilinx Inc.	IC CPLD 512MC 10.8NS 324BGA
EPM7064AETC100-4N	Intel	IC CPLD 64MC 4.5NS 100TQFP

BSD214SNH6327XTSA1 Mode

Espesifikasyon pou BSD214SNH6327XTSA1

pwodwi ki gen rapò pou BSD214SNH6327XTSA1 Infineon Technologies