BSD316SNL6327XT PDF Mode Download - MOSFET N-CH 30V 1.4A SOT-363

Espesifikasyon pou BSD316SNL6327XT

Nimewo pati : BSD316SNL6327XT

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 30V 1.4A SOT-363

Seri : OptiMOS™

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.4A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 160 mOhm @ 1.4A, 10V

Vgs (th) (Max) @ Id : 2V @ 3.7µA

Chaje Gate (Qg) (Max) @ Vgs : 0.6nC @ 5V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 94pF @ 15V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 500mW (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : PG-SOT363-6

Pake / Ka : 6-VSSOP, SC-88, SOT-363

Pwa : -

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Fabricant Nimewo Pati

BSD316SNL6327XT

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Infineon Technologies

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MOSFET N-CH 30V 1.4A SOT-363

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Espesifikasyon pou BSD316SNL6327XT

pwodwi ki gen rapò pou BSD316SNL6327XT Infineon Technologies