BUZ30A E3045A PDF Mode Download - MOSFET N-CH 200V 21A TO-263

Espesifikasyon pou BUZ30A E3045A

Nimewo pati : BUZ30A E3045A

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 200V 21A TO-263

Seri : SIPMOS®

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 200V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 21A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 130 mOhm @ 13.5A, 10V

Vgs (th) (Max) @ Id : 4V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : -

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 1900pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 125W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : D²PAK (TO-263AB)

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

BUZ30A E3045A

Entèn Nimewo Pati

ABC-BUZ30A E3045A

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 200V 21A TO-263

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

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59037 moso

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pwodwi ki gen rapò pou BUZ30A E3045A Infineon Technologies

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M4A5-256/128-10YNI	Lattice Semiconductor Corporation	IC CPLD 256MC 10NS 208QFP
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EPM7256AETC144-7N	Intel	IC CPLD 256MC 7.5NS 144TQFP
XCR3512XL-10FTG256C	Xilinx Inc.	IC CPLD 512MC 9NS 256BGA
M4A3-512/192-7FANC	Lattice Semiconductor Corporation	IC CPLD 512MC 7.5NS 256FBGA
EPM7064AEFC100-4N	Intel	IC CPLD 64MC 4.5NS 100FBGA
XC2C384-7PQG208C	Xilinx Inc.	IC CPLD 384MC 7.1NS 208QFP

BUZ30A E3045A Mode

Espesifikasyon pou BUZ30A E3045A

pwodwi ki gen rapò pou BUZ30A E3045A Infineon Technologies