CSD18532NQ5BT PDF Mode Download - MOSFET N-CH 60V 100A

Espesifikasyon pou CSD18532NQ5BT

Nimewo pati : CSD18532NQ5BT

Fabricant : T-I

Deskripsyon : MOSFET N-CH 60V 100A

Seri : NexFET™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 60V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 100A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V

RD sou (Max) @ Id, Vgs : 3.4 mOhm @ 25A, 10V

Vgs (th) (Max) @ Id : 3.4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 64nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 5340pF @ 30V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 3.1W (Ta), 156W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-VSON-CLIP (5x6)

Pake / Ka : 8-PowerTDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

CSD18532NQ5BT

Entèn Nimewo Pati

ABC-CSD18532NQ5BT

Fabricant

T-I

Kout Deskripsyon

MOSFET N-CH 60V 100A

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

404096 moso

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CSD18532NQ5BT Mode

Espesifikasyon pou CSD18532NQ5BT

pwodwi ki gen rapò pou CSD18532NQ5BT T-I