CSD19538Q2T PDF Mode Download - MOSFET NCH 100V 13.1A 6WSON

Espesifikasyon pou CSD19538Q2T

Nimewo pati : CSD19538Q2T

Fabricant : T-I

Deskripsyon : MOSFET NCH 100V 13.1A 6WSON

Seri : NexFET™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 13.1A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V

RD sou (Max) @ Id, Vgs : 59 mOhm @ 5A, 10V

Vgs (th) (Max) @ Id : 3.8V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 5.6nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 454pF @ 50V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 2.5W (Ta), 20.2W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 6-WSON (2x2)

Pake / Ka : 6-WDFN Exposed Pad

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

CSD19538Q2T

Entèn Nimewo Pati

ABC-CSD19538Q2T

Fabricant

T-I

Kout Deskripsyon

MOSFET NCH 100V 13.1A 6WSON

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1406874 moso

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CSD19538Q2T Mode

Espesifikasyon pou CSD19538Q2T

pwodwi ki gen rapò pou CSD19538Q2T T-I