Espesifikasyon pou CSD86311W1723

Nimewo pati : CSD86311W1723
Fabricant : T-I
Deskripsyon : MOSFET 2N-CH 25V 4.5A 12DSBGA
Seri : NexFET™
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 25V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.5A
RD sou (Max) @ Id, Vgs : 39 mOhm @ 2A, 8V
Vgs (th) (Max) @ Id : 1.4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 4nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds : 585pF @ 12.5V
Pouvwa - Max : 1.5W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 12-UFBGA, DSBGA
Pake Aparèy Founisè : 12-DSBGA
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET 2N-CH 25V 4.5A 12DSBGA
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
1425620 moso
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen CSD86311W1723 nan stock pou vann.
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pwodwi ki gen rapò pou CSD86311W1723 T-I

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