DGD2190S8-13 Mode
Espesifikasyon pou DGD2190S8-13
Nimewo pati :
DGD2190S8-13
Fabricant :
Diodes Incorporated
Deskripsyon :
IC GATE DRVR HALF-BRIDGE 8SO
Seri :
-
Estati Pati :
Not For New Designs
Kondwi konte genyen :
Half-Bridge
Kalite Chèn :
Independent
Kantite Chofè yo :
2
Kalite Gate :
IGBT, N-Channel MOSFET
Voltage - Pwovizyon pou :
10V ~ 20V
Vòltaj lojik - VIL, VIH :
0.8V, 2.5V
Kouran - Peak Sòti (Sous, Lavabo) :
4.5A, 4.5A
Kalite Antre :
Non-Inverting
Segondè Voltage Side - Max (Bootstrap) :
600V
Rise / Fall Time (Tip) :
25ns, 20ns
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SO
Pwa :
-
kondisyon :
Nouvo ak orijinal
Kalite Garanti :
365 jou garanti
stock Resous :
Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
ABC-DGD2190S8-13
Fabricant
Kout Deskripsyon
IC GATE DRVR HALF-BRIDGE 8SO
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
795921 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- ABC Semiconductor gen DGD2190S8-13 nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
pwodwi ki gen rapò pou DGD2190S8-13 Diodes Incorporated
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Intel |
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