DMG6601LVT-7 Mode
Espesifikasyon pou DMG6601LVT-7
Nimewo pati :
DMG6601LVT-7
Fabricant :
Diodes Incorporated
Deskripsyon :
MOSFET N/P-CH 30V 26TSOT
Seri :
-
Estati Pati :
Active
FET Kalite :
N and P-Channel
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.8A, 2.5A
RD sou (Max) @ Id, Vgs :
55 mOhm @ 3.4A, 10V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
12.3nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
422pF @ 15V
Pouvwa - Max :
850mW
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
SOT-23-6 Thin, TSOT-23-6
Pake Aparèy Founisè :
TSOT-26
Pwa :
-
kondisyon :
Nouvo ak orijinal
Kalite Garanti :
365 jou garanti
stock Resous :
Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
ABC-DMG6601LVT-7
Fabricant
Kout Deskripsyon
MOSFET N/P-CH 30V 26TSOT
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
6673282 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- ABC Semiconductor gen DMG6601LVT-7 nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
pwodwi ki gen rapò pou DMG6601LVT-7 Diodes Incorporated
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