DMN3016LDN-13 PDF Mode Download - MOSFET 2 N-CH 9.2A VDFN3030-8

Espesifikasyon pou DMN3016LDN-13

Nimewo pati : DMN3016LDN-13

Fabricant : Diodes Incorporated

Deskripsyon : MOSFET 2 N-CH 9.2A VDFN3030-8

Seri : -

Estati Pati : Active

FET Kalite : 2 N-Channel (Dual)

Karakteristik FET : Standard

Drenaj nan Voltage Sous (Vdss) : -

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 9.2A (Ta)

RD sou (Max) @ Id, Vgs : 20 mOhm @ 11A, 10V

Vgs (th) (Max) @ Id : 2V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 11.3nC @ 4.5V

Antre kapasite (Ciss) (Max) @ Vds : 1415pF @ 15V

Pouvwa - Max : -

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 8-PowerVDFN

Pake Aparèy Founisè : V-DFN3030-8 (Type J)

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

DMN3016LDN-13

Entèn Nimewo Pati

ABC-DMN3016LDN-13

Fabricant

Diodes Incorporated

Kout Deskripsyon

MOSFET 2 N-CH 9.2A VDFN3030-8

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pwodwi ki gen rapò pou DMN3016LDN-13 Diodes Incorporated

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DMN3016LDN-13 Mode

Espesifikasyon pou DMN3016LDN-13

pwodwi ki gen rapò pou DMN3016LDN-13 Diodes Incorporated