DMTH10H010LCT PDF Mode Download - MOSFET 100V 108A TO220AB

Espesifikasyon pou DMTH10H010LCT

Nimewo pati : DMTH10H010LCT

Fabricant : Diodes Incorporated

Deskripsyon : MOSFET 100V 108A TO220AB

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 108A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 9.5 mOhm @ 13A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 53.7nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 2592pF @ 50V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 2.4W (Ta), 166W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-220AB

Pake / Ka : TO-220-3

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

DMTH10H010LCT

Entèn Nimewo Pati

ABC-DMTH10H010LCT

Fabricant

Diodes Incorporated

Kout Deskripsyon

MOSFET 100V 108A TO220AB

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

361676 moso

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pwodwi ki gen rapò pou DMTH10H010LCT Diodes Incorporated

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DMTH10H010LCT Mode

Espesifikasyon pou DMTH10H010LCT

pwodwi ki gen rapò pou DMTH10H010LCT Diodes Incorporated