DN2625DK6-G Mode
Espesifikasyon pou DN2625DK6-G
Nimewo pati :
DN2625DK6-G
Fabricant :
Microchip Technology
Deskripsyon :
MOSFET 2N-CH 250V 1.1A 8VDFN
Seri :
-
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Depletion Mode
Drenaj nan Voltage Sous (Vdss) :
250V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.1A
RD sou (Max) @ Id, Vgs :
3.5 Ohm @ 1A, 0V
Vgs (th) (Max) @ Id :
-
Chaje Gate (Qg) (Max) @ Vgs :
7.04nC @ 1.5V
Antre kapasite (Ciss) (Max) @ Vds :
1000pF @ 25V
Pouvwa - Max :
-
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-VDFN Exposed Pad
Pake Aparèy Founisè :
8-DFN (5x5)
Pwa :
-
kondisyon :
Nouvo ak orijinal
Kalite Garanti :
365 jou garanti
stock Resous :
Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
ABC-DN2625DK6-G
Fabricant
Kout Deskripsyon
MOSFET 2N-CH 250V 1.1A 8VDFN
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
255710 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- ABC Semiconductor gen DN2625DK6-G nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
pwodwi ki gen rapò pou DN2625DK6-G Microchip Technology
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