Espesifikasyon pou EPC2102ENGRT

Nimewo pati : EPC2102ENGRT
Fabricant : EPC
Deskripsyon : GANFET 2 N-CHANNEL 60V 23A DIE
Seri : eGaN®
Estati Pati : Active
FET Kalite : 2 N-Channel (Half Bridge)
Karakteristik FET : GaNFET (Gallium Nitride)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 23A (Tj)
RD sou (Max) @ Id, Vgs : 4.4 mOhm @ 20A, 5V
Vgs (th) (Max) @ Id : 2.5V @ 7mA
Chaje Gate (Qg) (Max) @ Vgs : 6.8nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds : 830pF @ 30V
Pouvwa - Max : -
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : Die
Pake Aparèy Founisè : Die
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
GANFET 2 N-CHANNEL 60V 23A DIE
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
157728 moso
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen EPC2102ENGRT nan stock pou vann.
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FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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