GA100JT12-227 PDF Mode Download - TRANS SJT 1200V 160A SOT227

Espesifikasyon pou GA100JT12-227

Nimewo pati : GA100JT12-227

Fabricant : GeneSiC Semiconductor

Deskripsyon : TRANS SJT 1200V 160A SOT227

Seri : -

Estati Pati : Obsolete

FET Kalite : -

Teknoloji : SiC (Silicon Carbide Junction Transistor)

Drenaj nan Voltage Sous (Vdss) : 1200V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 160A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : -

RD sou (Max) @ Id, Vgs : 10 mOhm @ 100A

Vgs (th) (Max) @ Id : -

Chaje Gate (Qg) (Max) @ Vgs : -

Vgs (Max) : -

Antre kapasite (Ciss) (Max) @ Vds : 14400pF @ 800V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 535W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Chassis Mount

Pake Aparèy Founisè : SOT-227

Pake / Ka : SOT-227-4, miniBLOC

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

GA100JT12-227

Entèn Nimewo Pati

ABC-GA100JT12-227

Fabricant

GeneSiC Semiconductor

Kout Deskripsyon

TRANS SJT 1200V 160A SOT227

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

87584 moso

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pwodwi ki gen rapò pou GA100JT12-227 GeneSiC Semiconductor

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EPM7512AETC144-7	Intel	IC CPLD 512MC 7.5NS 144TQFP
EPM7064AETA100-10N	Intel	IC CPLD 64MC 10NS 100FBGA
XCR3512XL-12PQ208I	Xilinx Inc.	IC CPLD 512MC 10.8NS 208QFP
EPM7512AEFC256-10	Intel	IC CPLD 512MC 10NS 256FBGA
M4A3-32/32-10JC	Lattice Semiconductor Corporation	IC CPLD 32MC 10NS 44PLCC
XCR3384XL-12PQG208C	Xilinx Inc.	IC CPLD 384MC 10.8NS 208QFP
EPM2210F256C3	Intel	IC CPLD 1700MC 7NS 256FBGA
EPM7256AEFI100-7	Intel	IC CPLD 256MC 7.5NS 100FBGA
XCR3384XL-10TQ144C	Xilinx Inc.	IC CPLD 384MC 9NS 144QFP

GA100JT12-227 Mode

Espesifikasyon pou GA100JT12-227

pwodwi ki gen rapò pou GA100JT12-227 GeneSiC Semiconductor