GP2M010A065F PDF Mode Download - MOSFET N-CH 650V 9.5A TO220F

Espesifikasyon pou GP2M010A065F

Nimewo pati : GP2M010A065F

Fabricant : Global Power Technologies Group

Deskripsyon : MOSFET N-CH 650V 9.5A TO220F

Seri : -

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 650V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 9.5A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 820 mOhm @ 4.75A, 10V

Vgs (th) (Max) @ Id : 5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 36nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 1670pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 52W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-220F

Pake / Ka : TO-220-3 Full Pack

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

GP2M010A065F

Entèn Nimewo Pati

ABC-GP2M010A065F

Fabricant

Global Power Technologies Group

Kout Deskripsyon

MOSFET N-CH 650V 9.5A TO220F

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

84960 moso

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pwodwi ki gen rapò pou GP2M010A065F Global Power Technologies Group

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GP2M010A065F Mode

Espesifikasyon pou GP2M010A065F

pwodwi ki gen rapò pou GP2M010A065F Global Power Technologies Group