Espesifikasyon pou HN1B04FE-Y,LF

Nimewo pati : HN1B04FE-Y,LF
Fabricant : Toshiba Semiconductor and Storage
Deskripsyon : TRANS NPN/PNP 50V 0.15A ES6
Seri : -
Estati Pati : Active
Kalite tranzistò : NPN, PNP
Kouran - Pèseptè (Ic) (Max) : 150mA
Voltage - Pèseptè ki emèt deba (Max) : 50V
Vce saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Kouran - Cutoff Pèseptè (Max) : 100nA (ICBO)
DC Kouran Akeri (HFE) (Min) @ Ic, Vce : 120 @ 2mA, 6V
Pouvwa - Max : 100mW
Frekans - Tranzisyon : 80MHz
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : SOT-563, SOT-666
Pake Aparèy Founisè : ES6
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
TRANS NPN/PNP 50V 0.15A ES6
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
12321659 moso
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

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