IRFB61N15DPBF PDF Mode Download - MOSFET N-CH 150V 60A TO-220AB

Espesifikasyon pou IRFB61N15DPBF

Nimewo pati : IRFB61N15DPBF

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 150V 60A TO-220AB

Seri : HEXFET®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 150V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 60A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 32 mOhm @ 36A, 10V

Vgs (th) (Max) @ Id : 5.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 140nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 3470pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 2.4W (Ta), 330W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-220AB

Pake / Ka : TO-220-3

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

IRFB61N15DPBF

Entèn Nimewo Pati

ABC-IRFB61N15DPBF

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 150V 60A TO-220AB

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pwodwi ki gen rapò pou IRFB61N15DPBF Infineon Technologies

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Espesifikasyon pou IRFB61N15DPBF

pwodwi ki gen rapò pou IRFB61N15DPBF Infineon Technologies