IRFD213 PDF Mode Download - MOSFET N-CH 250V 450MA 4-DIP

Espesifikasyon pou IRFD213

Nimewo pati : IRFD213

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET N-CH 250V 450MA 4-DIP

Seri : -

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 250V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 450mA (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : -

RD sou (Max) @ Id, Vgs : 2 Ohm @ 270mA, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 8.2nC @ 10V

Vgs (Max) : -

Antre kapasite (Ciss) (Max) @ Vds : 140pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : -

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : 4-DIP, Hexdip, HVMDIP

Pake / Ka : 4-DIP (0.300", 7.62mm)

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

IRFD213

Entèn Nimewo Pati

ABC-IRFD213

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET N-CH 250V 450MA 4-DIP

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

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pwodwi ki gen rapò pou IRFD213 Vishay Siliconix

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IRFD213 Mode

Espesifikasyon pou IRFD213

pwodwi ki gen rapò pou IRFD213 Vishay Siliconix