IXFP38N30X3 Mode

Espesifikasyon pou IXFP38N30X3

Nimewo pati : IXFP38N30X3
Fabricant : IXYS
Deskripsyon : FET N-CHANNEL
Seri : HiPerFET™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 300V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 38A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 50 mOhm @ 19A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 35nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2240pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 240W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220
Pake / Ka : TO-220-3
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
IXFP38N30X3
Entèn Nimewo Pati
ABC-IXFP38N30X3
Fabricant
IXYS
Kout Deskripsyon
FET N-CHANNEL
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
180712 moso
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
ABC Semiconductor gen IXFP38N30X3 nan stock pou vann.
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EMS: 5-8 days.
Normal Post: 10-15 days.
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