IXTH6N120 PDF Mode Download - MOSFET N-CH 1200V 6A TO-247AD

Espesifikasyon pou IXTH6N120

Nimewo pati : IXTH6N120

Fabricant : IXYS

Deskripsyon : MOSFET N-CH 1200V 6A TO-247AD

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 1200V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 2.6 Ohm @ 3A, 10V

Vgs (th) (Max) @ Id : 5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 56nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 1950pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 300W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-247 (IXTH)

Pake / Ka : TO-247-3

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

IXTH6N120

Entèn Nimewo Pati

ABC-IXTH6N120

Fabricant

IXYS

Kout Deskripsyon

MOSFET N-CH 1200V 6A TO-247AD

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Plon gratis / RoHS Konfòm

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pwodwi ki gen rapò pou IXTH6N120 IXYS

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IXTH6N120 Mode

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pwodwi ki gen rapò pou IXTH6N120 IXYS