IXTU01N100D PDF Mode Download - MOSFET N-CH 1000V 0.1A TO-251

Espesifikasyon pou IXTU01N100D

Nimewo pati : IXTU01N100D

Fabricant : IXYS

Deskripsyon : MOSFET N-CH 1000V 0.1A TO-251

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 1000V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 100mA (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 0V

RD sou (Max) @ Id, Vgs : 80 Ohm @ 50mA, 0V

Vgs (th) (Max) @ Id : 5V @ 25µA

Chaje Gate (Qg) (Max) @ Vgs : -

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 120pF @ 25V

Karakteristik FET : Depletion Mode

Disipasyon Pouvwa (Max) : 1.1W (Ta), 25W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-251

Pake / Ka : TO-251-3 Short Leads, IPak, TO-251AA

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

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IXTU01N100D

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MOSFET N-CH 1000V 0.1A TO-251

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pwodwi ki gen rapò pou IXTU01N100D IXYS

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EPM7256AETI100-7N	Intel	IC CPLD 256MC 7.5NS 100TQFP
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