Espesifikasyon pou JAN1N5615US

Nimewo pati : JAN1N5615US
Fabricant : Microsemi Corporation
Deskripsyon : DIODE GEN PURP 200V 1A D-5A
Seri : Military, MIL-PRF-19500/429
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 200V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 800mV @ 3A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 150ns
Kouran - Fèy Reverse @ Vr : 500µA @ 200V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : SQ-MELF, A
Pake Aparèy Founisè : D-5A
Operating Tanperati - Junction : -65°C ~ 200°C
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
DIODE GEN PURP 200V 1A D-5A
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
62847 moso
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen JAN1N5615US nan stock pou vann.
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pwodwi ki gen rapò pou JAN1N5615US Microsemi Corporation

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