PHX18NQ20T,127 PDF Mode Download - MOSFET N-CH 200V 8.2A TO220F

Espesifikasyon pou PHX18NQ20T,127

Nimewo pati : PHX18NQ20T,127

Fabricant : NXP USA Inc.

Deskripsyon : MOSFET N-CH 200V 8.2A TO220F

Seri : TrenchMOS™

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 200V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8.2A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 180 mOhm @ 8A, 10V

Vgs (th) (Max) @ Id : 4V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 40nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 1850pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 30W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-220F

Pake / Ka : TO-220-3 Full Pack, Isolated Tab

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

PHX18NQ20T,127

Entèn Nimewo Pati

ABC-PHX18NQ20T,127

Fabricant

NXP USA Inc.

Kout Deskripsyon

MOSFET N-CH 200V 8.2A TO220F

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

45565 moso

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pwodwi ki gen rapò pou PHX18NQ20T,127 NXP USA Inc.

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PHX18NQ20T,127 Mode

Espesifikasyon pou PHX18NQ20T,127

pwodwi ki gen rapò pou PHX18NQ20T,127 NXP USA Inc.