RZY200P01TL PDF Mode Download - MOSFET P-CH 12V 20A TCPT3

Espesifikasyon pou RZY200P01TL

Nimewo pati : RZY200P01TL

Fabricant : Rohm Semiconductor

Deskripsyon : MOSFET P-CH 12V 20A TCPT3

Seri : -

Estati Pati : Not For New Designs

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 12V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 20A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : -

RD sou (Max) @ Id, Vgs : -

Vgs (th) (Max) @ Id : -

Chaje Gate (Qg) (Max) @ Vgs : -

Vgs (Max) : ±10V

Antre kapasite (Ciss) (Max) @ Vds : -

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 20W (Tc)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : TCPT3

Pake / Ka : 3-SMD, Flat Leads

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

RZY200P01TL

Entèn Nimewo Pati

ABC-RZY200P01TL

Fabricant

Rohm Semiconductor

Kout Deskripsyon

MOSFET P-CH 12V 20A TCPT3

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Plon gratis / RoHS Konfòm

akouchman Tan

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pwodwi ki gen rapò pou RZY200P01TL Rohm Semiconductor

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RZY200P01TL Mode

Espesifikasyon pou RZY200P01TL

pwodwi ki gen rapò pou RZY200P01TL Rohm Semiconductor