SI7962DP-T1-E3 Mode
Espesifikasyon pou SI7962DP-T1-E3
Nimewo pati :
SI7962DP-T1-E3
Fabricant :
Vishay Siliconix
Deskripsyon :
MOSFET 2N-CH 40V 7.1A PPAK SO-8
Seri :
TrenchFET®
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
7.1A
RD sou (Max) @ Id, Vgs :
17 mOhm @ 11.1A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
70nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
-
Pouvwa - Max :
1.4W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
PowerPAK® SO-8 Dual
Pake Aparèy Founisè :
PowerPAK® SO-8 Dual
Pwa :
-
kondisyon :
Nouvo ak orijinal
Kalite Garanti :
365 jou garanti
stock Resous :
Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
ABC-SI7962DP-T1-E3
Fabricant
Kout Deskripsyon
MOSFET 2N-CH 40V 7.1A PPAK SO-8
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
324674 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- ABC Semiconductor gen SI7962DP-T1-E3 nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
pwodwi ki gen rapò pou SI7962DP-T1-E3 Vishay Siliconix
| Nimewo pati | mak | Deskripsyon | Achte |
|---|---|---|---|
|
Intel |
IC CPLD 256MC 7.5NS 100TQFP |
||
|
Lattice Semiconductor Corporation |
IC CPLD 512MC 3.5NS 256FTBGA |
||
|
Xilinx Inc. |
IC CPLD 512MC 9NS 208QFP |
||
|
Xilinx Inc. |
IC CPLD 384MC 7NS 256BGA |
||
|
Xilinx Inc. |
IC CPLD 512MC 10.8NS 324BGA |
||
|
Intel |
IC CPLD 256MC 7.5NS 208QFP |
||
|
Intel |
IC CPLD 64MC 4.5NS 100FBGA |
||
|
Xilinx Inc. |
IC CPLD 512MC 10.8NS 208QFP |
||
|
Intel |
IC CPLD 512MC 12NS 208QFP |
||
|
Xilinx Inc. |
IC CPLD 384MC 9NS 144QFP |