TP65H035WSQA PDF Mode Download - GANFET N-CH 650V 47A TO247-3

Espesifikasyon pou TP65H035WSQA

Nimewo pati : TP65H035WSQA

Fabricant : Transphorm

Deskripsyon : GANFET N-CH 650V 47A TO247-3

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : GaNFET (Gallium Nitride)

Drenaj nan Voltage Sous (Vdss) : 650V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 47A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 41 mOhm @ 30A, 10V

Vgs (th) (Max) @ Id : 4.8V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 36nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 1500pF @ 400V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 187W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-247

Pake / Ka : TO-247-3

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

TP65H035WSQA

Entèn Nimewo Pati

ABC-TP65H035WSQA

Fabricant

Transphorm

Kout Deskripsyon

GANFET N-CH 650V 47A TO247-3

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pwodwi ki gen rapò pou TP65H035WSQA Transphorm

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M4A3-96/48-55VC	Lattice Semiconductor Corporation	IC CPLD 96MC 5.5NS 100TQFP
EPM7256AETI144-7	Intel	IC CPLD 256MC 7.5NS 144TQFP
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XCR3384XL-12PQG208C	Xilinx Inc.	IC CPLD 384MC 10.8NS 208QFP

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pwodwi ki gen rapò pou TP65H035WSQA Transphorm