TPS1101DG4 PDF Mode Download - MOSFET P-CH 15V 2.3A 8-SOIC

Espesifikasyon pou TPS1101DG4

Nimewo pati : TPS1101DG4

Fabricant : T-I

Deskripsyon : MOSFET P-CH 15V 2.3A 8-SOIC

Seri : -

Estati Pati : Active

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 15V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.3A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.7V, 10V

RD sou (Max) @ Id, Vgs : 90 mOhm @ 2.5A, 10V

Vgs (th) (Max) @ Id : 1.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 11.25nC @ 10V

Vgs (Max) : +2V, -15V

Antre kapasite (Ciss) (Max) @ Vds : -

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 791mW (Ta)

Operating Tanperati : -40°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-SOIC

Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

TPS1101DG4

Entèn Nimewo Pati

ABC-TPS1101DG4

Fabricant

T-I

Kout Deskripsyon

MOSFET P-CH 15V 2.3A 8-SOIC

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

396753 moso

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TPS1101DG4 Mode

Espesifikasyon pou TPS1101DG4

pwodwi ki gen rapò pou TPS1101DG4 T-I