SCTH90N65G2V-7 Mode
Espesifikasyon pou SCTH90N65G2V-7
Nimewo pati :
SCTH90N65G2V-7
Fabricant :
STMicroelectronics
Deskripsyon :
SILICON CARBIDE POWER MOSFET 650
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
SiCFET (Silicon Carbide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
90A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
18V
RD sou (Max) @ Id, Vgs :
26 mOhm @ 50A, 18V
Vgs (th) (Max) @ Id :
5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
157nC @ 18V
Vgs (Max) :
+22V, -10V
Antre kapasite (Ciss) (Max) @ Vds :
3300pF @ 400V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
330W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
H2PAK-7
Pake / Ka :
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Pwa :
-
kondisyon :
Nouvo ak orijinal
Kalite Garanti :
365 jou garanti
stock Resous :
Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
ABC-SCTH90N65G2V-7
Fabricant
Kout Deskripsyon
SILICON CARBIDE POWER MOSFET 650
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
63456 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- ABC Semiconductor gen SCTH90N65G2V-7 nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
pwodwi ki gen rapò pou SCTH90N65G2V-7 STMicroelectronics
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