SCTH90N65G2V-7 - SILICON CARBIDE POWER MOSFET 650

Fabricant Nimewo Pati

SCTH90N65G2V-7

Entèn Nimewo Pati

ABC-SCTH90N65G2V-7

Fabricant

STMicroelectronics

Kout Deskripsyon

SILICON CARBIDE POWER MOSFET 650

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

63456 Pieces

referans pri

~~USD 23.5705~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen SCTH90N65G2V-7 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou SCTH90N65G2V-7

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SCTH90N65G2V-7

Fabricant : STMicroelectronics

Deskripsyon : SILICON CARBIDE POWER MOSFET 650

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : SiCFET (Silicon Carbide)

Drenaj nan Voltage Sous (Vdss) : 650V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 90A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 18V

RD sou (Max) @ Id, Vgs : 26 mOhm @ 50A, 18V

Vgs (th) (Max) @ Id : 5V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 157nC @ 18V

Vgs (Max) : +22V, -10V

Antre kapasite (Ciss) (Max) @ Vds : 3300pF @ 400V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 330W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : H2PAK-7

Pake / Ka : TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SCTH , SCTH90N

dokiman pou SCTH90N65G2V-7

Fich : SCTH90N65G2V-7.pdf

pwodwi ki gen rapò pou SCTH90N65G2V-7 STMicroelectronics

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