IRFHM8337TRPBF - MOSFET N-CH 30V 12A 8PQFN

Fabricant Nimewo Pati

IRFHM8337TRPBF

Entèn Nimewo Pati

ABC-IRFHM8337TRPBF

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 30V 12A 8PQFN

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

2346400 Pieces

referans pri

~~USD 0.1395~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen IRFHM8337TRPBF nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IRFHM8337TRPBF

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IRFHM8337TRPBF

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 30V 12A 8PQFN

Seri : HEXFET®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 12A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 12.4 mOhm @ 12A, 10V

Vgs (th) (Max) @ Id : 2.35V @ 25µA

Chaje Gate (Qg) (Max) @ Vgs : 8.1nC @ 4.5V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 755pF @ 15V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 2.8W (Ta), 25W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-PQFN (3.3x3.3), Power33

Pake / Ka : 8-PowerTDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IRFH , IRFHM83

dokiman pou IRFHM8337TRPBF

Fich : IRFHM8337TRPBF.pdf

pwodwi ki gen rapò pou IRFHM8337TRPBF Infineon Technologies

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