TPC8213-H(TE12LQ,M - MOSFET 2N-CH 60V 5A SOP8

Fabricant Nimewo Pati

TPC8213-H(TE12LQ,M

Entèn Nimewo Pati

ABC-TPC8213-H(TE12LQ,M

Fabricant

Toshiba Semiconductor and Storage

Kout Deskripsyon

MOSFET 2N-CH 60V 5A SOP8

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

50778 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen TPC8213-H(TE12LQ,M nan stock pou vann.

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Espesifikasyon pou TPC8213-H(TE12LQ,M

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : TPC8213-H(TE12LQ,M

Fabricant : Toshiba Semiconductor and Storage

Deskripsyon : MOSFET 2N-CH 60V 5A SOP8

Seri : -

Estati Pati : Obsolete

FET Kalite : 2 N-Channel (Dual)

Karakteristik FET : Logic Level Gate

Drenaj nan Voltage Sous (Vdss) : 60V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5A

RD sou (Max) @ Id, Vgs : 50 mOhm @ 2.5A, 10V

Vgs (th) (Max) @ Id : 2.3V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 11nC @ 10V

Antre kapasite (Ciss) (Max) @ Vds : 625pF @ 10V

Pouvwa - Max : 450mW

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 8-SOIC (0.173", 4.40mm Width)

Pake Aparèy Founisè : 8-SOP (5.5x6.0)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : TPC821 , TPC8213-H

dokiman pou TPC8213-H(TE12LQ,M

Fich : TPC8213-H(TE12LQ,M.pdf

pwodwi ki gen rapò pou TPC8213-H(TE12LQ,M Toshiba Semiconductor and Storage

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