SI1025X-T1-E3 - MOSFET 2P-CH 60V 0.19A SOT563F

Fabricant Nimewo Pati

SI1025X-T1-E3

Entèn Nimewo Pati

ABC-SI1025X-T1-E3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET 2P-CH 60V 0.19A SOT563F

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

49673 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen SI1025X-T1-E3 nan stock pou vann.

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Espesifikasyon pou SI1025X-T1-E3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SI1025X-T1-E3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET 2P-CH 60V 0.19A SOT563F

Seri : TrenchFET®

Estati Pati : Obsolete

FET Kalite : 2 P-Channel (Dual)

Karakteristik FET : Logic Level Gate

Drenaj nan Voltage Sous (Vdss) : 60V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 190mA

RD sou (Max) @ Id, Vgs : 4 Ohm @ 500mA, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 1.7nC @ 15V

Antre kapasite (Ciss) (Max) @ Vds : 23pF @ 25V

Pouvwa - Max : 250mW

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : SOT-563, SOT-666

Pake Aparèy Founisè : SC-89-6

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SI10 , SI1025

dokiman pou SI1025X-T1-E3

Fich : SI1025X-T1-E3.pdf

pwodwi ki gen rapò pou SI1025X-T1-E3 Vishay Siliconix

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