IRFH4209DTRPBF - MOSFET N-CH 25V 44A 8PQFN

Fabricant Nimewo Pati

IRFH4209DTRPBF

Entèn Nimewo Pati

ABC-IRFH4209DTRPBF

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 25V 44A 8PQFN

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

83328 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen IRFH4209DTRPBF nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IRFH4209DTRPBF

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IRFH4209DTRPBF

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 25V 44A 8PQFN

Seri : FASTIRFET™, HEXFET®

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 25V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 44A (Ta), 260A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 1.1 mOhm @ 50A, 10V

Vgs (th) (Max) @ Id : 2.1V @ 100µA

Chaje Gate (Qg) (Max) @ Vgs : 74nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 4620pF @ 13V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 3.5W (Ta), 125W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : PQFN (5x6)

Pake / Ka : 8-PowerTDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IRFH , IRFH420

dokiman pou IRFH4209DTRPBF

Fich : IRFH4209DTRPBF.pdf

pwodwi ki gen rapò pou IRFH4209DTRPBF Infineon Technologies

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