SI8900EDB-T2-E1 - MOSFET 2N-CH 20V 5.4A 10-MFP

Fabricant Nimewo Pati

SI8900EDB-T2-E1

Entèn Nimewo Pati

ABC-SI8900EDB-T2-E1

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET 2N-CH 20V 5.4A 10-MFP

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

380758 Pieces

referans pri

~~USD 0.85965~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen SI8900EDB-T2-E1 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou SI8900EDB-T2-E1

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SI8900EDB-T2-E1

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET 2N-CH 20V 5.4A 10-MFP

Seri : TrenchFET®

Estati Pati : Active

FET Kalite : 2 N-Channel (Dual) Common Drain

Karakteristik FET : Logic Level Gate

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5.4A

RD sou (Max) @ Id, Vgs : -

Vgs (th) (Max) @ Id : 1V @ 1.1mA

Chaje Gate (Qg) (Max) @ Vgs : -

Antre kapasite (Ciss) (Max) @ Vds : -

Pouvwa - Max : 1W

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 10-UFBGA, CSPBGA

Pake Aparèy Founisè : 10-Micro Foot™ CSP (2x5)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SI890 , SI8900E

dokiman pou SI8900EDB-T2-E1

Fich : SI8900EDB-T2-E1.pdf

pwodwi ki gen rapò pou SI8900EDB-T2-E1 Vishay Siliconix

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