DMG3N60SJ3 - MOSFET BVDSS 501V 650V TO251

Fabricant Nimewo Pati

DMG3N60SJ3

Entèn Nimewo Pati

ABC-DMG3N60SJ3

Fabricant

Diodes Incorporated

Kout Deskripsyon

MOSFET BVDSS 501V 650V TO251

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1043308 Pieces

referans pri

~~USD 0.313735~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen DMG3N60SJ3 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou DMG3N60SJ3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : DMG3N60SJ3

Fabricant : Diodes Incorporated

Deskripsyon : MOSFET BVDSS 501V 650V TO251

Seri : Automotive, AEC-Q101

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 650V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.8A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 3.5 Ohm @ 1.5A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 12.6nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 354pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 41W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-251

Pake / Ka : TO-251-3, IPak, Short Leads

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : DMG , DMG3N

dokiman pou DMG3N60SJ3

Fich : DMG3N60SJ3.pdf

pwodwi ki gen rapò pou DMG3N60SJ3 Diodes Incorporated

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