IRFD224PBF - MOSFET N-CH 250V 630MA 4-DIP

Fabricant Nimewo Pati

IRFD224PBF

Entèn Nimewo Pati

ABC-IRFD224PBF

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET N-CH 250V 630MA 4-DIP

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

394359 Pieces

referans pri

~~USD 0.83~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen IRFD224PBF nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IRFD224PBF

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IRFD224PBF

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET N-CH 250V 630MA 4-DIP

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 250V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 630mA (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 1.1 Ohm @ 380mA, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 14nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 260pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1W (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : 4-DIP, Hexdip, HVMDIP

Pake / Ka : 4-DIP (0.300", 7.62mm)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IRF , IRFD2

dokiman pou IRFD224PBF

Fich : IRFD224PBF.pdf

pwodwi ki gen rapò pou IRFD224PBF Vishay Siliconix

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