TPN22006NH,LQ - MOSFET N CH 60V 9A 8-TSON

Fabricant Nimewo Pati

TPN22006NH,LQ

Entèn Nimewo Pati

ABC-TPN22006NH,LQ

Fabricant

Toshiba Semiconductor and Storage

Kout Deskripsyon

MOSFET N CH 60V 9A 8-TSON

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

2052190 Pieces

referans pri

~~USD 0.1595~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen TPN22006NH,LQ nan stock pou vann.

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Espesifikasyon pou TPN22006NH,LQ

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : TPN22006NH,LQ

Fabricant : Toshiba Semiconductor and Storage

Deskripsyon : MOSFET N CH 60V 9A 8-TSON

Seri : U-MOSVIII-H

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 60V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 9A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 6.5V, 10V

RD sou (Max) @ Id, Vgs : 22 mOhm @ 4.5A, 10V

Vgs (th) (Max) @ Id : 4V @ 100µA

Chaje Gate (Qg) (Max) @ Vgs : 12nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 710pF @ 30V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 700mW (Ta), 18W (Tc)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-TSON Advance (3.3x3.3)

Pake / Ka : 8-PowerVDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : TPN2 , TPN220

dokiman pou TPN22006NH,LQ

Fich : TPN22006NH,LQ.pdf

pwodwi ki gen rapò pou TPN22006NH,LQ Toshiba Semiconductor and Storage

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