SIHD1K4N60E-GE3 - MOSFET N-CH DPAK TO-252

Fabricant Nimewo Pati

SIHD1K4N60E-GE3

Entèn Nimewo Pati

ABC-SIHD1K4N60E-GE3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET N-CH DPAK TO-252

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

495943 Pieces

referans pri

~~USD 0.66~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen SIHD1K4N60E-GE3 nan stock pou vann.

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Espesifikasyon pou SIHD1K4N60E-GE3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SIHD1K4N60E-GE3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET N-CH DPAK TO-252

Seri : E

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.2A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 1.45 Ohm @ 500mA, 10V

Vgs (th) (Max) @ Id : 5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 7.5nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 172pF @ 100V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 63W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : TO-252AA

Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SIHD1 , SIHD1K4

dokiman pou SIHD1K4N60E-GE3

Fich : SIHD1K4N60E-GE3.pdf

pwodwi ki gen rapò pou SIHD1K4N60E-GE3 Vishay Siliconix

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