FCP11N60N-F102 - MOSFET N-CH 600V 10.8A TO220F

Fabricant Nimewo Pati

FCP11N60N-F102

Entèn Nimewo Pati

ABC-FCP11N60N-F102

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 600V 10.8A TO220F

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

384307 Pieces

referans pri

~~USD 0.851705~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen FCP11N60N-F102 nan stock pou vann.

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Espesifikasyon pou FCP11N60N-F102

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FCP11N60N-F102

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 600V 10.8A TO220F

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 10.8A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 299 mOhm @ 5.4A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 35.6nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 1505pF @ 100V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 94W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-220F

Pake / Ka : TO-220-3 Full Pack

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FCP1 , FCP11N6

dokiman pou FCP11N60N-F102

Fich : FCP11N60N-F102.pdf

pwodwi ki gen rapò pou FCP11N60N-F102 ON Semiconductor

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