BSS816NW L6327 - MOSFET N-CH 20V 1.4A SOT323

Fabricant Nimewo Pati

BSS816NW L6327

Entèn Nimewo Pati

ABC-BSS816NW L6327

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 20V 1.4A SOT323

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

39456 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen BSS816NW L6327 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou BSS816NW L6327

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : BSS816NW L6327

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 20V 1.4A SOT323

Seri : OptiMOS™

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.4A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 2.5V

RD sou (Max) @ Id, Vgs : 160 mOhm @ 1.4A, 2.5V

Vgs (th) (Max) @ Id : 750mV @ 3.7µA

Chaje Gate (Qg) (Max) @ Vgs : 0.6nC @ 2.5V

Vgs (Max) : ±8V

Antre kapasite (Ciss) (Max) @ Vds : 180pF @ 10V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 500mW (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : PG-SOT323-3

Pake / Ka : SC-70, SOT-323

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : BSS8 , BSS816N

dokiman pou BSS816NW L6327

Fich : BSS816NW L6327.pdf

pwodwi ki gen rapò pou BSS816NW L6327 Infineon Technologies

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