NVMFS6B14NLT1G - MOSFET N-CH 100V 11A DFN5

Fabricant Nimewo Pati

NVMFS6B14NLT1G

Entèn Nimewo Pati

ABC-NVMFS6B14NLT1G

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 100V 11A DFN5

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

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Espesifikasyon pou NVMFS6B14NLT1G

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stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : NVMFS6B14NLT1G

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 100V 11A DFN5

Seri : Automotive, AEC-Q101

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 11A (Ta), 55A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 13 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 8nC @ 4.5V

Vgs (Max) : ±16V

Antre kapasite (Ciss) (Max) @ Vds : 1680pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 3.8W (Ta), 94W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 5-DFN (5x6) (8-SOFL)

Pake / Ka : 8-PowerTDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : NVMF , NVMFS6B

dokiman pou NVMFS6B14NLT1G

Fich : NVMFS6B14NLT1G.pdf

pwodwi ki gen rapò pou NVMFS6B14NLT1G ON Semiconductor

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