IXTH1N200P3 - MOSFET N-CH 2000V 1A TO-247

Fabricant Nimewo Pati

IXTH1N200P3

Entèn Nimewo Pati

ABC-IXTH1N200P3

Fabricant

IXYS

Kout Deskripsyon

MOSFET N-CH 2000V 1A TO-247

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

118184 Pieces

referans pri

~~USD 3.165~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen IXTH1N200P3 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IXTH1N200P3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IXTH1N200P3

Fabricant : IXYS

Deskripsyon : MOSFET N-CH 2000V 1A TO-247

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 2000V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 40 Ohm @ 500mA, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 23.5nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 646pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 125W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-247 (IXTH)

Pake / Ka : TO-247-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IXT , IXTH1

dokiman pou IXTH1N200P3

Fich : IXTH1N200P3.pdf

pwodwi ki gen rapò pou IXTH1N200P3 IXYS

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