NTLJS3113PT1G - MOSFET P-CH 20V 3.5A 6WDFN

Fabricant Nimewo Pati

NTLJS3113PT1G

Entèn Nimewo Pati

ABC-NTLJS3113PT1G

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET P-CH 20V 3.5A 6WDFN

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

3199651 Pieces

referans pri

~~USD 0.1023~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

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Espesifikasyon pou NTLJS3113PT1G

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : NTLJS3113PT1G

Fabricant : ON Semiconductor

Deskripsyon : MOSFET P-CH 20V 3.5A 6WDFN

Seri : µCool™

Estati Pati : Active

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.5A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.5V, 4.5V

RD sou (Max) @ Id, Vgs : 40 mOhm @ 3A, 4.5V

Vgs (th) (Max) @ Id : 1V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 15.7nC @ 4.5V

Vgs (Max) : ±8V

Antre kapasite (Ciss) (Max) @ Vds : 1329pF @ 16V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 700mW (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 6-WDFN (2x2)

Pake / Ka : 6-WDFN Exposed Pad

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : NTLJ , NTLJS3

dokiman pou NTLJS3113PT1G

Fich : NTLJS3113PT1G.pdf

pwodwi ki gen rapò pou NTLJS3113PT1G ON Semiconductor

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